Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers
Identifieur interne : 00D788 ( Main/Repository ); précédent : 00D787; suivant : 00D789Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers
Auteurs : RBID : Pascal:03-0460670Descripteurs français
- Pascal (Inist)
- Laser semiconducteur, Laser IR, Pompage optique, Etude expérimentale, Laser puits quantique, Diffraction RX, Paramètre cristallin, Recombinaison non radiative, Diffraction électron haute énergie, Epitaxie jet moléculaire, Composition chimique, Stoechiométrie, Indium arséniure, Gallium antimoniure, Aluminium antimoniure, Indium antimoniure, InAs/GaSb/InAs/AlSb, InAs/Ga0,75In0,25Sb/InAs/AlSb, InAs, As In, GaSb, Ga Sb, AlSb, Al Sb, Ga0,75 In0,25 Sb, Ga In Sb, 4255P.
English descriptors
- KwdEn :
- Aluminium antimonides, Chemical composition, Experimental study, Gallium antimonides, High energy electron diffraction, Indium antimonides, Indium arsenides, Infrared laser, Lattice parameters, Molecular beam epitaxy, Non radiative recombination, Optical pumping, Quantum well lasers, Semiconductor lasers, Stoichiometry, XRD.
Abstract
We report on a high resolution X-ray diffraction analysis of three antimonide-based mid-infrared laser samples (designed for optical pumping) with an active type-II structure. The deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and asymmetrical strain. Layer compositions are determined and layer sequences are examined accurately also considering the results of reflective high-energy electron diffraction studies during growth. Layer thicknesses and strain values of the type-II structure quantum wells as well as stoichiometry of the mixed anion interfaces are extracted. By designing the antimonide-to-arsenide interfaces in sample II, we achieved exact lattice matching of the active region to the substrate. Based on the knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time resolved photoluminescence as well as laser properties under optically pumped laser operation.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers</title><author><name sortKey="Hoffmann, G" uniqKey="Hoffmann G">G. Hoffmann</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Schimper, H J" uniqKey="Schimper H">H. J. Schimper</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Schwender, C" uniqKey="Schwender C">C. Schwender</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Herhammer, N" uniqKey="Herhammer N">N. Herhammer</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="West, G F" uniqKey="West G">G. F. West</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Vogelgesang, B" uniqKey="Vogelgesang B">B. Vogelgesang</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Drumm, J O" uniqKey="Drumm J">J. O. Drumm</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Fouckhardt, H" uniqKey="Fouckhardt H">H. Fouckhardt</name><affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author><author><name sortKey="Scheib, M" uniqKey="Scheib M">M. Scheib</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Institute for Surface and Thin Film Analysis, University of Kaiserslautern</s1><s2>67663 kaiserslautern</s2><s3>DEU</s3><sZ>9 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName><orgName type="university">Université de technologie de Kaiserslautern</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0460670</idno><date when="2003">2003</date><idno type="stanalyst">PASCAL 03-0460670 INIST</idno><idno type="RBID">Pascal:03-0460670</idno><idno type="wicri:Area/Main/Corpus">00C744</idno><idno type="wicri:Area/Main/Repository">00D788</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Chemical composition</term><term>Experimental study</term><term>Gallium antimonides</term><term>High energy electron diffraction</term><term>Indium antimonides</term><term>Indium arsenides</term><term>Infrared laser</term><term>Lattice parameters</term><term>Molecular beam epitaxy</term><term>Non radiative recombination</term><term>Optical pumping</term><term>Quantum well lasers</term><term>Semiconductor lasers</term><term>Stoichiometry</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term><term>Laser IR</term><term>Pompage optique</term><term>Etude expérimentale</term><term>Laser puits quantique</term><term>Diffraction RX</term><term>Paramètre cristallin</term><term>Recombinaison non radiative</term><term>Diffraction électron haute énergie</term><term>Epitaxie jet moléculaire</term><term>Composition chimique</term><term>Stoechiométrie</term><term>Indium arséniure</term><term>Gallium antimoniure</term><term>Aluminium antimoniure</term><term>Indium antimoniure</term><term>InAs/GaSb/InAs/AlSb</term><term>InAs/Ga0,75In0,25Sb/InAs/AlSb</term><term>InAs</term><term>As In</term><term>GaSb</term><term>Ga Sb</term><term>AlSb</term><term>Al Sb</term><term>Ga0,75 In0,25 Sb</term><term>Ga In Sb</term><term>4255P</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report on a high resolution X-ray diffraction analysis of three antimonide-based mid-infrared laser samples (designed for optical pumping) with an active type-II structure. The deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and asymmetrical strain. Layer compositions are determined and layer sequences are examined accurately also considering the results of reflective high-energy electron diffraction studies during growth. Layer thicknesses and strain values of the type-II structure quantum wells as well as stoichiometry of the mixed anion interfaces are extracted. By designing the antimonide-to-arsenide interfaces in sample II, we achieved exact lattice matching of the active region to the substrate. Based on the knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time resolved photoluminescence as well as laser properties under optically pumped laser operation.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>257</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Detailed X-ray diffraction studies on optically pumped mid-infrared InAs/Ga(In)Sb/AlSb type-II lasers</s1></fA08><fA11 i1="01" i2="1"><s1>HOFFMANN (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>SCHIMPER (H. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>SCHWENDER (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>HERHAMMER (N.)</s1></fA11><fA11 i1="05" i2="1"><s1>WEST (G. F.)</s1></fA11><fA11 i1="06" i2="1"><s1>VOGELGESANG (B.)</s1></fA11><fA11 i1="07" i2="1"><s1>DRUMM (J. O.)</s1></fA11><fA11 i1="08" i2="1"><s1>FOUCKHARDT (H.)</s1></fA11><fA11 i1="09" i2="1"><s1>SCHEIB (M.)</s1></fA11><fA14 i1="01"><s1>Research group Integrated Optoelectronics and Microoptics, Physics Department, University of Kaiserslautern</s1><s2>67663 Kaiserslautern</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="02"><s1>Institute for Surface and Thin Film Analysis, University of Kaiserslautern</s1><s2>67663 kaiserslautern</s2><s3>DEU</s3><sZ>9 aut.</sZ></fA14><fA20><s1>42-50</s1></fA20><fA21><s1>2003</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000112898170050</s5></fA43><fA44><s0>0000</s0><s1>© 2003 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>29 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>03-0460670</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>We report on a high resolution X-ray diffraction analysis of three antimonide-based mid-infrared laser samples (designed for optical pumping) with an active type-II structure. The deformation of the layer unit cells is determined with high accuracy, taking into account relaxation, layer tilting, and asymmetrical strain. Layer compositions are determined and layer sequences are examined accurately also considering the results of reflective high-energy electron diffraction studies during growth. Layer thicknesses and strain values of the type-II structure quantum wells as well as stoichiometry of the mixed anion interfaces are extracted. By designing the antimonide-to-arsenide interfaces in sample II, we achieved exact lattice matching of the active region to the substrate. Based on the knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time resolved photoluminescence as well as laser properties under optically pumped laser operation.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Laser semiconducteur</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Semiconductor lasers</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Laser IR</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Infrared laser</s0><s5>05</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Laser IR</s0><s5>05</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Pompage optique</s0><s5>06</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Optical pumping</s0><s5>06</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>07</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0><s5>07</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser puits quantique</s0><s5>13</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Quantum well lasers</s0><s5>13</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>15</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>XRD</s0><s5>15</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Paramètre cristallin</s0><s5>16</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Lattice parameters</s0><s5>16</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Recombinaison non radiative</s0><s5>21</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Non radiative recombination</s0><s5>21</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Recombinación no radiativa</s0><s5>21</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Diffraction électron haute énergie</s0><s5>22</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>High energy electron diffraction</s0><s5>22</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Epitaxie jet moléculaire</s0><s5>23</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Molecular beam epitaxy</s0><s5>23</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Composition chimique</s0><s5>24</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Chemical composition</s0><s5>24</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Stoechiométrie</s0><s5>25</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Stoichiometry</s0><s5>25</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2><s5>31</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2><s5>31</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium antimoniure</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium antimonides</s0><s2>NK</s2><s5>32</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Aluminium antimoniure</s0><s2>NK</s2><s5>33</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Aluminium antimonides</s0><s2>NK</s2><s5>33</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2><s5>37</s5></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2><s5>37</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>InAs/GaSb/InAs/AlSb</s0><s4>INC</s4><s5>75</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>InAs/Ga0,75In0,25Sb/InAs/AlSb</s0><s4>INC</s4><s5>76</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>InAs</s0><s4>INC</s4><s5>77</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>As In</s0><s4>INC</s4><s5>78</s5></fC03><fC03 i1="21" i2="3" l="FRE"><s0>GaSb</s0><s4>INC</s4><s5>79</s5></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Ga Sb</s0><s4>INC</s4><s5>80</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>AlSb</s0><s4>INC</s4><s5>83</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Al Sb</s0><s4>INC</s4><s5>84</s5></fC03><fC03 i1="25" i2="3" l="FRE"><s0>Ga0,75 In0,25 Sb</s0><s4>INC</s4><s5>85</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Ga In Sb</s0><s4>INC</s4><s5>86</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4><s5>91</s5></fC03><fN21><s1>315</s1></fN21><fN82><s1>PSI</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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